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Synthesis and Electronic Structure of Mid-Infrared Absorbing Cu3SbSe4 and CuSbSe4 Nanocrystals
Annina Moser1, Olesya Yarema1, Gregorio Garcia2
1Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland.
Abstract:
Aliovalent I-V-VI semiconductor nanocrystals are promising candidates for thermoelectric and optoelectronic applications. Famatinite Cu3SbSe4 stands out due to its high absorption coefficient and narrow band gap in the mid-infrared spectral range. This paper combines experiment and theory to investigate the synthesis and electronic structure of colloidal CuSbSe4 nanocrystals. We achieve predictive composition control of size-uniform CuSbSe4 (x = 1.9-3.4) nanocrystals. Density functional theory (DFT)-parametrized tight-binding simulations on nanocrystals show that the more the Cu-vacancies, the wider the band gap of CuSbSe4 nanocrystals, a trend which we also confirm experimentally via FTIR spectroscopy. We show that SbCu antisite defects can create mid-gap states, which may give rise to sub-bandgap absorption. This work provides a detailed study of CuSbSe4 nanocrystals and highlights the potential opportunities as well as challenges for their application in infrared devices.

