Interface engineering strategy for multisource spintronic devices via TMPS₄ modulation of black-phosphorus.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Interface engineering enhances performance in logic operations and information storage using two-dimensional ferromagnetic (FM) materials.
• Van der Waals (vdW) heterostructures offer efficient design strategies for logic components.

Purpose of the Study:

• To propose and investigate two novel vdW heterostructures: black-phosphorus (BP) integrated with TMPS4 (TM = Cr, Fe-Mn).
• To explore the potential of these heterostructures for advanced logic devices and magnetic information storage.

Main Methods:

• First-principles simulations were employed to analyze the stability, carrier mobility, and thermoelectric properties of the proposed heterojunctions.
• The electronic band structure of the BP/CrPS4 heterojunction was specifically modulated to a type II configuration.

Main Results:

• The BP/TMPS4 heterojunctions demonstrated high stability, carrier mobility, and thermoelectric effects.
• The BP/CrPS4 heterojunction exhibited a type II electronic band structure, crucial for device functionality.
• Devices based on these structures showed a significant spin Seebeck effect (SSE), perfect spin filtering effect (SFE), high extinction ratio (1347), and high thermal magnetoresistivity (10^11).

Conclusions:

• The developed BP/TMPS4 bilayers are promising candidates for next-generation spin-based vdW devices.
• These findings facilitate the future development of atomically thin magnetic information storage technologies.