Related Experiment Video

Updated: Jul 17, 2025

An Experimental Protocol for Assessing the Performance of New Ultrasound Probes Based on CMUT Technology in Application to Brain Imaging
16:01

An Experimental Protocol for Assessing the Performance of New Ultrasound Probes Based on CMUT Technology in Application to Brain Imaging

Published on: September 24, 2017

10.5K

Dual-Backplate CMUTs With Wide Bandwidth and Low Driving Voltage for Airborne Applications

Sebastian Anzinger, Christian Bretthauer, Hutomo Suryo Wasisto

    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
    |August 30, 2023
    PubMed

    More Related Videos

    Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters15:25

    Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

    Published on: February 4, 2018

    6.2K
    Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces07:51

    Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces

    Published on: February 24, 2012

    24.7K

    Related Concept Videos

    MOSFET Amplifiers01:17

    MOSFET Amplifiers

    The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
    186
    Bus Impedance Matrix01:24

    Bus Impedance Matrix

    Calculating subtransient fault currents for three-phase faults in an N-bus power system involves using the positive-sequence network. When a three-phase short circuit occurs at a specific bus, the analysis uses the superposition method to evaluate two separate circuits.
    In the first circuit, all machine voltage sources are short-circuited, leaving only the prefault voltage source at the fault location. The positive-sequence bus impedance matrix can be determined by solving the nodal equations,...
    144
    Design Example: Capacitance Multiplier Circuit01:20

    Design Example: Capacitance Multiplier Circuit

    In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
    The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
    821
    MOS Capacitor01:25

    MOS Capacitor

    A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
    The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
    833
    MOSFET01:16

    MOSFET

    The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
    In an n-MOSFET, the structure includes n-type source and drain...
    512
    Cut-off Frequency of BJT01:17

    Cut-off Frequency of BJT

    Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
    Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
    748