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Published on: May 24, 2020
Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films
Darshika Khone1, Sandeep Kumar2, Mohammad Balal3
1Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University, Gurgaon, 122413, India.
Abstract:
Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta2O5. Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.

