Electrically driven europium-doped GaN microdisk.

Area of Science:

• Nanophotonics
• Materials Science
• Optoelectronics

Background:

• Microdisk resonators are key for active nanophotonic devices.
• Electrical injection is crucial but challenging due to optical property degradation.

Purpose of the Study:

• To demonstrate an electrically injected microdisk resonator.
• To overcome challenges in current injection for nanophotonic devices.
• To utilize europium-doped gallium nitride (Eu-GaN) for light emission.

Main Methods:

• Fabrication of an electrically injected microdisk.
• Incorporation of an SiO2 spacer layer to isolate optical modes from electrical contacts.
• Characterization of optical emission and resonance properties.

Main Results:

• Successful fabrication of an electrically injected Eu-GaN microdisk resonator.
• Eu-related light emission observed upon electrical injection.
• Achieved a cavity quality (Q)-factor of 3400, indicating good optical performance.

Conclusions:

• The developed microdisk resonator design enables electrical driving without compromising optical properties.
• Eu-doped GaN is a viable material for electrically driven nanophotonic devices.
• The use of an SiO2 spacer is an effective strategy for integrating electrical injection.