Phonon-Assisted Auger-Meitner Recombination in Silicon from First Principles

Area of Science:

• Condensed Matter Physics
• Materials Science
• Semiconductor Physics

Background:

• Auger-Meitner recombination (AMR) is a key non-radiative recombination mechanism in semiconductors.
• Understanding AMR is vital for optimizing semiconductor device performance and efficiency.
• Indirect-gap semiconductors like silicon present unique challenges for studying AMR.

Purpose of the Study:

• To develop a consistent first-principles methodology for studying direct and phonon-assisted AMR.
• To investigate the microscopic origins of AMR in silicon.
• To identify pathways for modifying AMR rates in silicon.

Main Methods:

• First-principles calculations.
• Consistent methodology for direct and phonon-assisted AMR.
• Decomposition of recombination rates by phonon modes and electronic valleys.

Main Results:

• Phonon-assisted AMR contributions significantly dominate the total recombination rate in both n-type and p-type silicon.
• Excellent agreement between theoretical results and experimental measurements.
• Identification of specific phonon modes and electronic valleys contributing to AMR.

Conclusions:

• Phonons play a critical role in enabling AMR in indirect-gap semiconductors like silicon.
• The developed methodology provides a robust framework for studying AMR.
• Strain engineering presents a viable strategy for tuning AMR rates in silicon.