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Phonon-Assisted Auger-Meitner Recombination in Silicon from First Principles
Kyle Bushick1, Emmanouil Kioupakis1
1Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA.
Abstract:
We present a consistent first-principles methodology to study both direct and phonon-assisted Auger-Meitner recombination (AMR) in indirect-gap semiconductors that we apply to investigate the microscopic origin of AMR processes in silicon. Our results are in excellent agreement with experimental measurements and show that phonon-assisted contributions dominate the recombination rate in both n-type and p-type silicon, demonstrating the critical role of phonons in enabling AMR. We also decompose the overall rates into contributions from specific phonons and electronic valleys to further elucidate the microscopic origins of AMR. Our results highlight potential pathways to modify the AMR rate in silicon via strain engineering.
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