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Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide.

Chen Chen1, Saptarsi Ghosh1, Francesca Adams1

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Summary
This summary is machine-generated.

Optimizing scanning capacitance microscopy (SCM) for Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) requires specific tips and dual AC/DC bias. This enhances nanoscale electrical property characterization.

Keywords:
High electron mobility transistor structuresPlan-view characterisationScanning capacitance microscopy

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Scanning Capacitance Microscopy (SCM) offers nanoscale resolution for characterizing electrical properties.
  • Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) structures are crucial for advanced electronics.
  • Optimizing SCM for these structures requires careful consideration of experimental setup and imaging conditions.

Purpose of the Study:

  • To investigate and optimize the experimental setup for SCM.
  • To determine optimal imaging conditions for enhancing SCM contrast in AlGaN/GaN heterostructures.
  • To improve the characterization of local electrical properties in GaN-based HEMTs.

Main Methods:

  • Utilized sharp, conductive diamond-coated tips with a large spring constant for stable tip-sample contact.
  • Positioned the SCM tip near the sample edge and Ohmic contact.
  • Applied both AC and DC bias, determining optimal DC bias values by analyzing local dC/dV-V curves.

Main Results:

  • Sharp tips (≤25nm radius) with conductive diamond coating and large spring constants are essential.
  • Dual AC and DC bias application is necessary to deplete the two-dimensional electron gas (2DEG).
  • Optimized DC bias values yield strong, opposing SCM contrast, while AC bias has minimal impact.

Conclusions:

  • The study provides optimized SCM methodology for GaN-based HEMTs.
  • The findings enable enhanced nanoscale electrical property characterization.
  • The methodology is potentially applicable to other HEMT structures and highly-doped samples.