You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jul 16, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Taehun Lee1, Hae-In Kim1, Yoonjin Cho1
1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Yttrium oxide resistive random-access memory (RRAM) devices achieve multilevel cell switching by controlling conductive filament formation. These devices show promise for high-accuracy neural network applications.
08:07Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
10:32Design, Surface Treatment, Cellular Plating, and Culturing of Modular Neuronal Networks Composed of Functionally Inter-connected Circuits
Published on: April 15, 2015
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: