Sol-Gel-Processed Y₂O₃-Al₂O₃ Mixed Oxide-Based Resistive Random-Access-Memory Devices

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Resistive random-access-memory (RRAM) is a promising non-volatile memory technology.
• Developing stable and efficient RRAM materials is crucial for next-generation electronics.
• Yttrium oxide (Y2O3) and aluminum oxide (Al2O3) are explored for their dielectric properties.

Purpose of the Study:

• To fabricate and characterize Y2O3-Al2O3 mixed oxide RRAM devices using sol-gel processing.
• To investigate the effect of Y2O3 and Al2O3 proportions on device properties.
• To identify an optimal composition for high-performance RRAM.

Main Methods:

• Sol-gel processing to create Y2O3-Al2O3 mixed oxide films.
• Fabrication of RRAM devices on indium tin oxide/glass substrates.
• Structural, chemical, and electrical property analysis (including I-V characteristics, endurance, and retention).

Main Results:

• Devices exhibited bipolar RRAM characteristics without a forming step.
• Increased Al2O3 content reduced crystallinity and increased amorphous phase.
• A 50% Y2O3-50% Al2O3 device showed the highest High-Resistance-State/Low-Resistance-State (HRS/LRS) ratio (>10^4).
• This optimal composition demonstrated good endurance (~100 cycles) and retention (>10^4 s).

Conclusions:

• Sol-gel processed Y2O3-Al2O3 mixed oxides are suitable for RRAM applications.
• The 50% Y2O3-50% Al2O3 composition offers superior performance, including a high HRS/LRS ratio and stability.
• These findings contribute to the development of advanced memory devices with improved characteristics.