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Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D
Yuan-Chiu Huang1, Yu-Xian Lin1, Chien-Kang Hsiung2
1Institute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.
Nanomaterials (Basel, Switzerland)
|September 9, 2023
Summary
Advanced packaging utilizes copper-copper bonding for higher I/O density. This study reviews low-temperature techniques to overcome challenges like copper oxidation and wafer warpage, enabling finer pitch applications.
Area of Science:
- Semiconductor manufacturing
- Materials science
- Advanced packaging technologies
Background:
- Copper-copper (Cu-Cu) bonding is crucial for advanced semiconductor packaging, offering superior I/O density, electrical, and thermal properties over conventional methods.
- A significant challenge in Cu-Cu bonding is the high thermal budget required, often leading to copper oxidation, wafer warpage, and back-end-of-line process issues.
- Reducing thermal budget and preventing oxidation are critical for low-temperature hybrid bonding in specific applications.
Purpose of the Study:
- To review advancements in low-temperature Cu-based bonding for semiconductor packaging.
- To explore techniques for overcoming challenges in fine-pitch Cu-Cu bonding.
- To present a novel hybrid bonding scheme for metal/polymer interfaces.
Main Methods:
- Review of various low-temperature Cu-Cu bonding techniques, including surface pretreatment, activation, structure modification, and orientation control.
- Investigation of hybrid bonding approaches like Cu/SiO2, Cu/SiCN, and Cu/polymer.
- Development of a new metal/polymer interface hybrid bonding scheme.
Main Results:
- Low-temperature Cu-based bonding techniques have been developed to address challenges in advanced packaging.
- Existing low-temperature Cu-Cu bonding methods face difficulties in fine-pitch applications due to coplanarity and gap-filling issues.
- The novel hybrid bonding scheme achieves good flatness and an excellent bonding interface without chemical mechanical polishing (CMP).
Conclusions:
- Low-temperature hybrid bonding is essential for overcoming limitations in advanced semiconductor packaging.
- Novel bonding strategies are needed to enable fine-pitch applications and improve process efficiency.
- The presented metal/polymer hybrid bonding scheme offers a promising solution for high-performance, low-thermal-budget packaging.
