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Related Concept Videos

Carrier Transport01:21

Carrier Transport

468
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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Precipitation Gravimetry01:03

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Precipitation gravimetry is based on converting an analyte into a sparingly soluble precipitate, which is separated by filtration and weighed. An ideal precipitate should be pure, insoluble, of known composition, and easily filtered from the reaction mixture.
In determining nickel by gravimetric analysis, a precipitant of ethanolic dimethylglyoxime is added to a hot nickel salt solution. This is quickly followed by the dropwise addition of dilute ammonia solution until precipitation occurs. A...
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Related Experiment Video

Updated: Jul 16, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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First-Principles Study on Si Atom Diffusion Behavior in Ni-Based Superalloys.

Yubo Sun1,2, Zhiping Wang1,2, Mingrun Du2

  • 1School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.

Materials (Basel, Switzerland)
|September 9, 2023
PubMed
Summary
This summary is machine-generated.

Silicon atom diffusion in nickel-based superalloys is influenced by doping elements like chromium, molybdenum, and tungsten. Larger dopant radii increase silicon diffusion barriers, impacting brazed joint structures.

Keywords:
Ni-based superalloySi atom diffusion behaviorenergy barrierfirst-principlesmelting point depressant elementsrefractory elements

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Area of Science:

  • Materials Science
  • Computational Materials Science
  • Physical Chemistry

Background:

  • Nickel-based superalloys are critical in high-temperature applications.
  • Silicon is a key element affecting alloy properties and processing.
  • Understanding diffusion mechanisms is vital for predicting alloy behavior.

Purpose of the Study:

  • To investigate silicon (Si) atom diffusion in nickel-based superalloys.
  • To analyze the effect of alloying elements (Cr, Mo, W) on Si diffusion.
  • To provide theoretical insights into phase structure evolution in brazed joints.

Main Methods:

  • First-principles calculations were employed to model supercells.
  • Site occupation and diffusion energy barriers for Si atoms were analyzed.
  • The influence of dopant type and size on Si diffusion was evaluated.

Main Results:

  • Doping with Cr, Mo, and W enhances stability and favors Si occupation in octahedral sites.
  • Increased dopant radius generally increases the Si diffusion energy barrier.
  • Si diffusion is significantly lower around shared Fe atoms in γ'-Ni3Fe compared to Ni atoms.

Conclusions:

  • Alloying element choice and size critically influence Si diffusion in Ni-based superalloys.
  • Specific diffusion pathways and energy barriers were identified.
  • Findings offer a theoretical foundation for controlling microstructures in wide-gap brazed joints.