Efficient CsPbBr₃ Quantum-Dot Light-Emitting Diodes Using Sputtered NiO Films as Hole Injection Layers.

Area of Science:

• Materials Science
• Optoelectronics
• Solid-State Lighting

Background:

• Perovskite quantum dots (QDs) offer excellent optoelectronic properties for novel solid-state lighting applications like QD-LEDs.
• Traditional QD-LEDs use PEDOT:PSS as a hole injection layer (HIL), but its acidic nature compromises device stability.
• A stable and efficient HIL is crucial for advancing perovskite QD-LED technology.

Purpose of the Study:

• To investigate sputtered nickel oxide (NiO) films as a replacement for PEDOT:PSS in perovskite QD-LEDs.
• To optimize NiO film characteristics by controlling sputtering parameters for improved device performance.
• To evaluate the performance of CsPbBr3 QD-LEDs utilizing NiO as the HIL.

Main Methods:

• Fabrication of NiO films using sputtering techniques with varied parameters.
• Integration of sputtered NiO films as HIL in CsPbBr3 QD-LED device structures.
• Characterization of NiO film properties and evaluation of QD-LED device performance, including luminescence and external quantum efficiency (EQE).

Main Results:

• Sputtered NiO films with tunable characteristics were successfully prepared.
• The optimized NiO-based CsPbBr3 QD-LEDs demonstrated maximum luminescence of 20,118 cd/m².
• The optimized devices achieved a high external quantum efficiency (EQE) of up to 3.63%.

Conclusions:

• Sputtered NiO films serve as a viable and stable alternative to PEDOT:PSS for HIL in perovskite QD-LEDs.
• The proposed NiO-based HIL significantly enhances the stability and performance of QD-LEDs.
• This advancement paves the way for more robust and efficient perovskite QD-LEDs for solid-state lighting.