Analysis and Implementation of Controlled Semiconductor Switch for Ultra-Wideband Radar Sensor Applications

Area of Science:

• Electrical Engineering
• Microwave Engineering
• Semiconductor Devices

Background:

• Ultra-wideband (UWB) sensor applications necessitate specialized hardware for high-frequency signal switching.
• Integration trends in Systems on Chip (SoC) and Systems in Package (SiP) drive the need for compact, high-performance switches.
• High-frequency signal switching is crucial for telecommunications and laboratory instrumentation.

Purpose of the Study:

• To design and analyze a high-frequency semiconductor integrated switch specifically for UWB applications.
• To achieve high integration using NMOS transistors and optimize performance through precise circuit and layout design.
• To develop a switch suitable for UWB sensor systems, including antenna MIMO configuration and calibration tool switching.

Main Methods:

• Designed a high-frequency semiconductor integrated switch using NMOS transistors and CMOS logic control.
• Implemented the switch design in low-cost 0.35 µm SiGe BiCMOS technology.
• Conducted circuit simulations, layout creation, and post-layout simulations including parasitic extraction.
• Fabricated the chip and measured its parameters.

Main Results:

• The fabricated UWB switch operates with a supply current of 2 mA at 3.3 V.
• Achieved a bandwidth of 6 GHz and an insertion loss of -2.2 dB at 1 GHz.
• Demonstrated isolation of -33 dB at 1 GHz.
• The measured parameters satisfy the requirements for UWB sensor applications.

Conclusions:

• The designed and fabricated high-frequency semiconductor integrated switch is suitable for UWB sensor applications.
• The use of NMOS transistors and optimized design compensated for frequency limitations.
• The SiGe BiCMOS technology enabled the integration of the switch with other UWB system components.