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Bridged EGFET Design for the Rapid Screening of Sorbents as Sensitisers in Water-Pollution Sensors
Hadi Rasam AlQahtani1, Abdel-Basit M Al-Odayni2, Yusif Alhamed1
1Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia.
Abstract:
We further simplify the most 'user-friendly' potentiometric sensor for waterborne analytes, the 'extended-gate field effect transistor' (EGFET). This is accomplished using a 'bridge' design, that links two separate water pools, a 'control gate' (CG) pool and a 'floating gate' (FG) pool, by a bridge filled with agar-agar hydrogel. We show electric communication between electrodes in the pools across the gel bridge to the gate of an LND150 FET. When loading the gel bridge with a sorbent that is known to act as a sensitiser for Cu2+ water pollution, namely, the ion exchanging zeolite 'clinoptilolite', the bridged EGFET acts as a potentiometric sensor to waterborne Cu2+. We then introduce novel sensitisers into the gel bridge, the commercially available resins PurometTM MTS9140 and MTS9200, which are sorbents for the extraction of mercury (Hg2+) pollution from water. We find a response of the bridged EGFET to Hg2+ water pollution, setting a template for the rapid screening of ion exchange resins that are readily available for a wide range of harmful (or precious) metal ions. We fit the potentiometric sensor response vs. pollutant concentration characteristics to the Langmuir-Freundlich (LF) model which is discussed in context with other ion-sensor characteristics.
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