Related Experiment Video
Updated: Jul 16, 2025

05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
9.7K
Zeeman- and Orbital-Driven Phase Shifts in Planar Josephson Junctions
Daniel Z Haxell1, Marco Coraiola1, Deividas Sabonis1
1IBM Research Europe-Zurich, 8803 Rüschlikon, Switzerland.
ACS Nano
|September 11, 2023
Summary
We observed gate-dependent phase shifts in InAs/Al Josephson junctions (JJs) due to magnetic fields. These shifts reveal insights into phase transitions and potential applications in quantum computing.
Area of Science:
- Condensed Matter Physics
- Quantum Information Science
Background:
- Josephson junctions (JJs) are crucial for superconducting electronics and quantum computing.
- Understanding phase transitions in hybrid JJs is essential for device development.
Purpose of the Study:
- Investigate phase shifts in the current-phase relation of InAs/Al JJs under in-plane magnetic fields.
- Elucidate the interplay of Zeeman, spin-orbit, and orbital effects in hybrid JJs.
- Explore signatures of induced phase transitions and their dependence on device geometry.
Main Methods:
- Supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions.
- Application of in-plane magnetic fields.
- Systematic study of devices with varying superconducting lead sizes to probe orbital effects.
Main Results:
- Observed gate-dependent phase shifts up to 0.5π at low fields, attributed to Rashba spin-orbit interaction and Zeeman coupling.
- Identified a distinct phase shift at higher fields, linked to a switching current minimum and superconducting gap modulation.
- Demonstrated that these phase transition signatures scale with superconducting lead size, highlighting the role of orbital effects.
Conclusions:
- The study elucidates the complex interplay of fundamental physical effects in hybrid Josephson junctions.
- Results provide a deeper understanding of phase transitions in InAs/Al JJs.
- Findings contribute to the advancement of quantum computing and superconducting electronics.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
279
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
279
Metal-Semiconductor Junctions
380
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
380
Magnetic Field due to Moving Charges
8.8K
A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
8.8K
Biasing of P-N Junction
590
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
590
Phase Transitions
19.2K
Whether solid, liquid, or gas, a substance's state depends on the order and arrangement of its particles (atoms, molecules, or ions). Particles in the solid pack closely together, generally in a pattern. The particles vibrate about their fixed positions but do not move or squeeze past their neighbors. In liquids, although the particles are closely spaced, they are randomly arranged. The position of the particles are not fixed—that is, they are free to move past their neighbors to...
19.2K
Electric Field of Parallel Conducting Plates
1.0K
Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric...
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric...
1.0K

