Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Magnetostatic Boundary Conditions01:28

Magnetostatic Boundary Conditions

993
An electric field suffers a discontinuity at a surface charge. Similarly, a magnetic field is discontinuous at a surface current. The perpendicular component of a magnetic field is continuous across the interface of two magnetic mediums. In contrast, its parallel component, perpendicular to the current, is discontinuous by the amount equal to the product of the vacuum permeability and the surface current. Like the scalar potential in electrostatics, the vector potential is also continuous...
993
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

279
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
279
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

1.4K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.4K
Divergence and Curl of Magnetic Field01:26

Divergence and Curl of Magnetic Field

3.0K
The magnetic field due to a volume current distribution given by the Biot–Savart Law can be expressed as follows:
3.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

380
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
380
Magnetic Field Due To A Thin Straight Wire01:28

Magnetic Field Due To A Thin Straight Wire

4.9K
Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
4.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Glass-like anomalies and unconventional thermoelectric transport in chimney ladder crystals.

Nature communications·2026
Same author

EXPRESS: Activation of GPR17 ameliorates neuroinflammation and improves neurological function via NF-κB pathway in an experimental germinal matrix hemorrhage rat model.

Journal of cerebral blood flow and metabolism : official journal of the International Society of Cerebral Blood Flow and Metabolism·2026
Same author

Safety and Efficacy of a Sandwich Total Neoadjuvant Therapy Strategy for Low-Risk Distal Locally Advanced Rectal Cancer: Results From the TESS Phase II Trial.

MedComm·2026
Same author

Knowledge, attitude, and practice towards fatty liver disease among the general population in Shanghai, China: a community-based cross-sectional study.

Frontiers in public health·2026
Same author

ApoB and LDL partially explain the association between family history of diabetes and lower clinical pregnancy in women who conceived with PCOS.

Frontiers in nutrition·2026
Same author

Fetal growth in relation to prenatal per- and polyfluoroalkyl substances exposure: A prospective birth cohort study.

Environment international·2026

Related Experiment Video

Updated: Jul 16, 2025

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
09:44

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

121

Truncated mass divergence in a Mott metal.

Konstantin Semeniuk1,2, Hui Chang1, Jordan Baglo1,3

  • 1Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.

Proceedings of the National Academy of Sciences of the United States of America
|September 11, 2023
PubMed
Summary

Researchers studied the Mott metal-insulator transition in NiS₂ using quantum oscillations. They found charge carrier mass enhancement drives the transition, with the critical point lying within the insulating phase.

Keywords:
Mott localizationhigh-pressure techniquesquantum oscillations

More Related Videos

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
08:55

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

Published on: June 7, 2018

8.6K
Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
06:53

Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks

Published on: June 9, 2023

2.0K

Related Experiment Videos

Last Updated: Jul 16, 2025

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
09:44

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

121
Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
08:55

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

Published on: June 7, 2018

8.6K
Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
06:53

Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks

Published on: June 9, 2023

2.0K

Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • The Mott metal-insulator transition is a fundamental concept in condensed matter physics.
  • Experimental validation of the Brinkman-Rice picture of Mott localization is needed, particularly concerning quasiparticle Fermi surface and effective mass.

Purpose of the Study:

  • To experimentally investigate the metallic state near the Mott localization threshold.
  • To test theoretical predictions of the Brinkman-Rice model using quantum oscillation measurements.

Main Methods:

  • Utilized high-pressure quantum oscillation measurements.
  • Examined clean, undoped NiS₂ crystals.

Main Results:

  • Observed significant enhancement of quasiparticle mass approaching Mott localization, while the Fermi surface remained largely unchanged.
  • Quasiparticle mass divergence confirmed charge carrier slowdown as the driver of the metal-insulator transition.
  • The Mott critical point was found to be located within the insulating region of the phase diagram.

Conclusions:

  • The study provides direct experimental evidence for the Brinkman-Rice picture of Mott localization.
  • The findings highlight the role of mass enhancement in driving metal-insulator transitions.
  • The inaccessibility of the Mott critical point in NiS₂ aligns with observations in other clean metallic systems near magnetic transitions.