Influence of Sn doping on the optoelectronic properties of ZnO nanoparticles

Zinc Oxide (ZnO) nanoparticles (NPs) obtained a lot of attention from researchers and industries because of their superior properties as an optoelectronic material. Doping, especially tin (Sn), can further fine-tune their optoelectronic properties. In this manuscript, we have reported the optoelectronic properties of Sn-doped ZnO NPs, which were synthesized by a simple chemical solution method. A wide range of dopant (Sn) concentrations were used in the ratios of 0, 1, 3, 5, 7, and 10 weight percent. The effects of dopant (Sn) concentration on the structural, morphological, elemental composition, and optical properties of ZnO NPs were investigated by using an X-ray diffractometer (XRD), Field Emission Scanning Electron Microscope (FESEM), X-ray photoelectron spectrometer (XPS) and UV-Vis-NIR respectively. XRD analysis revealed the shifting of diffraction patterns towards a higher angle along with decreasing intensity. The calculated crystallite size using the XRD varied from 40.12 nm to 28.15 nm with an increasing doping percentage. Sn doping notably influences the size of ZnO NPs, along with crystal quality, strain, and dislocation density. The X-ray photoelectron spectroscopy (XPS) study showed the presence of zinc (Zn), oxygen (O), and tin (Sn) with their preferred oxidation states in the synthesized NPs. UV-Visible spectroscopy (UV-Vis) showed that the bandgap changed from 3.55 to 3.85 eV with the increasing concentration of Sn. FE-SEM revealed that the structures and surfaces were irregular and not homogeneous. The above findings for ZnO nanostructures show their potential application in optoelectronic devices.