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Laser debonding application in ultra-thin device processing.

Saiqiang Wang, Yang Yu, Song Li

    Applied Optics
    |September 14, 2023
    PubMed
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    Researchers explored laser debonding for cost-effective, ultra-thin wafer device production. They achieved successful laser lift-off of silicon wafers using a novel ultraviolet nanosecond laser process.

    Area of Science:

    • Materials Science
    • Laser Processing Technology
    • Semiconductor Manufacturing

    Background:

    • Laser debonding presents advantages like precision, speed, and minimal damage.
    • There is a need for cost-effective methods in producing high-performance ultra-thin wafer devices.

    Purpose of the Study:

    • To investigate the feasibility of laser processing for low-cost, high-performance ultra-thin wafer device manufacturing.
    • To develop a compatible laser debonding process for temporary bonding adhesives.

    Main Methods:

    • Utilized a 355 nm ultraviolet nanosecond laser.
    • Developed a laser debonding process for domestic temporary bonding adhesives.
    • Employed a line light source shaping system for optimized laser spot characteristics.

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    Last Updated: Jul 16, 2025

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    Main Results:

    • Successfully performed laser lift-off of 8-inch silicon/temporary bonding adhesive/glass substrate samples.
    • Achieved lift-off at a power density of 250 mJ/cm².
    • Developed a line light source producing a spot >1 cm with <10% energy unevenness.

    Conclusions:

    • Laser debonding is a feasible technology for producing ultra-thin wafer devices.
    • The developed UV nanosecond laser process is effective for silicon wafer lift-off.
    • The optimized line light source enhances process efficiency and uniformity.