Optimized performance of 905 nm semiconductor lasers by using the high strain quantum well

We propose and experimentally demonstrate that the lasing power and characteristic temperature (T₀) of 905 nm semiconductor lasers can be optimized by use of the high strain quantum well (HSQW). To fix the lasing wavelength around 905 nm, HSQW with a higher ndium (In) content of the InGaAs gain material than that of the commonly used low strain quantum well (LSQW) requires a thickness-reduced quantum well. Thus, the HSQW has the following two advantages: stronger quantum size effects caused by the deep and thin quantum well, and higher compressive strain caused by a high In content of the InGaAs gain material. With the similar epitaxial structure, laser diodes with HSQW have a characteristic temperature T₀ of 207 K and can deliver a higher lasing power with less power saturations. The high strain quantum well optimization method can be extended to other laser diodes with a wavelength near 900 nm with low In content InGaAs quantum wells and other similar low-strain gain material systems.