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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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High-Responsivity and Broadband MoS₂ Photodetector Using Interfacial Engineering.

Chenglin Wang¹, Qianqian Wu¹, Yang Ding¹

¹Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China.

ACS Applied Materials & Interfaces

|September 20, 2023

Summary

This summary is machine-generated.

Researchers developed a new MoS2/silicon photodetector that achieves high responsivity and a broad spectral range. This breakthrough overcomes limitations of previous designs, enabling enhanced performance for light detection applications.

Keywords:

MoS2 photodetector broadband detection high responsivity interfacial engineering plasma treatment

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Combining molybdenum disulfide (MoS2) with silicon technology is key for high-performance photodetectors.
Existing MoS2/silicon photodetectors struggle to achieve high responsivity, fast response, and broad spectral detection simultaneously.

Purpose of the Study:

To develop a broad spectral n-type MoS2/p-type silicon heterojunction photodetector with improved performance.
To investigate the effect of SiO2 dielectric layer pretreatment on photodetector characteristics.

Main Methods:

Fabrication of an n-type MoS2/p-type silicon heterojunction photodetector.
Pretreatment of the SiO2 dielectric layer on silicon substrate using soft plasma.
Characterization of the photodetector's responsivity, response time, and spectral detection range.

Main Results:

The pretreated SiO2 dielectric layer and silicon substrate formed a multilayer heterostructure with high carrier concentration and responsiveness.
The MoS2/silicon photodetector demonstrated a responsivity of 4.05 × 10^4 A/W at 637 nm with a power density of 2 μW/mm^2.
The device exhibited a broad detectable spectral range from 447 nm to 1600 nm.

Conclusions:

The developed MoS2/silicon heterojunction photodetector overcomes previous limitations, offering high responsivity and broad spectral detection.
The soft plasma pretreatment method is versatile and applicable to other n-type transition metal dichalcogenides (TMDCs) like MoTe2 and ReS2.