Mask and plate: a scalable front metallization with low-cost potential for III-V-based tandem solar cells enabling...

Area of Science:

• Materials Science
• Renewable Energy
• Semiconductor Physics

Background:

• Mass production of III-V photovoltaics requires cost-effective metallization.
• Photolithography for front metallization is expensive and limits scalability.

Purpose of the Study:

• To develop and demonstrate an industrially relevant, low-cost mask and plate method for front metallization of III-V solar cells.
• To replace expensive photolithography with a more accessible technique.

Main Methods:

• Utilizing inkjet printing for precise application of plating resist on solar cell fronts.
• Employing a structured mask and plate for direct nickel (Ni) electroplating.
• Fabricating narrow Ni contacts with widths of (10.5 ± 0.8) µm.

Main Results:

• Achieved Ni contacts with sharp edges and homogenous shapes.
• Demonstrated a 4 cm² III-V-on-silicon triple-junction solar cell with mask and plate metallization.
• Certified conversion efficiency of (31.6 ± 1.1)% (AM1.5 g), matching photolithography reference (31.4 ± 1.1)%.

Conclusions:

• The mask and plate method is a viable, low-cost alternative to photolithography for III-V solar cell metallization.
• This approach enables high-performance solar cells suitable for mass production.
• The developed technique achieves efficiencies comparable to established methods.