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Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe3GeTe2
Qianwen Zhao1,2, Yingmei Zhu3,4, Hanying Zhang1,2
1Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
ACS Applied Materials & Interfaces
|September 22, 2023
Summary
Room-temperature ferromagnetism was induced at interfaces between nonmagnetic materials, Fe3GeTe2 and platinum (Pt). This magnetic proximity effect enhances spin currents, offering new possibilities for efficient spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Two-dimensional ferromagnetism and magnetic semiconductors are crucial for spintronic devices.
- A major challenge is their low Curie temperature (Tc), often below room temperature.
- Current enhancement methods like voltage control and doping have limitations.
Purpose of the Study:
- To investigate the potential of magnetic proximity effect to induce room-temperature ferromagnetism.
- To explore the application of this effect in enhancing spin current generation.
- To develop new strategies for creating functional spintronic devices from low-Tc materials.
Main Methods:
- Sputtering platinum (Pt) onto semiconducting Fe3GeTe2.
- Utilizing independent electrical and magnetization measurements.
- Conducting structural analysis and employing control samples (e.g., with Tantalum).
Main Results:
- Achieved room-temperature ferromagnetism (Tc > 400 K) at the Fe3GeTe2/Pt interface, where neither material is ferromagnetic at 300 K.
- Confirmed the ferromagnetism originates from the interface due to magnetic proximity, not material aggregation or artifacts.
- Observed a more than two-fold enhancement in spin current generation at the Fe3GeTe2/Pt interface compared to conventional ferromagnet/Pt structures.
Conclusions:
- Magnetic proximity effect in nonferromagnetic material interfaces can induce high-Tc ferromagnetism.
- This effect significantly enhances spin current, enabling highly efficient spintronic devices.
- Provides a novel pathway for developing room-temperature spintronic applications using low-Tc magnetic materials.
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