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Published on: June 28, 2018
Spin polarization in quantum point contact based on wurtzite topological quantum well
Xin Xue1, Fobao Huang2,3, Gongwei Hu4
1Department of Physics, Lvliang University, Lvliang 03300, China.
This study demonstrates electrical control of spin-polarized electron transport in topological wurtzite quantum wells using a quantum point contact. Adjusting the quantum point contact width tunes spin-orbit coupling, enabling manipulation for spintronics applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Wide-gap wurtzite semiconductors are key for high-temperature spintronics.
- Topological insulators in wurtzite quantum wells (QWs) offer platforms for spin-polarized transport via topological edges and Rashba spin-orbit coupling (SOC).
Purpose of the Study:
- To propose and investigate a spin-polarized device in a quantum point contact (QPC) structure based on ZnO/CdO wurtzite topological QWs.
- To explore the manipulation of spin-polarized electron transport through electrical control.
Main Methods:
- Utilized a quantum point contact (QPC) structure within ZnO/CdO wurtzite topological QWs.
- Investigated the quantum size effect on lateral spin-orbit coupling (SOC) and edge state band gaps by varying QPC width.
- Analyzed spin-polarized conductance oscillations and spin precession controlled by split-gate voltage.
Main Results:
- QPC width effectively controls lateral SOC and edge state band gaps via the quantum size effect.
- Spin-polarized conductance exhibits voltage-controlled oscillations due to spin precession.
- QPC-induced spin splitting is highly nonlinear, strengthening near the band gap.
- Spin splitting is suppressed for QPC widths > 50 nm, leading to long spin precession lengths.
Conclusions:
- QPC width-dependent lateral SOC offers an electrical method to manipulate spin-polarized electron transport in topological wurtzite systems.
- This approach is promising for advancing high-temperature spintronics applications.
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