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Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate
Han-Tang Hung1, Fu-Ling Chang1, Chin-Hao Tsai1
1Department of Materials Science & Engineering, National Taiwan University, Taipei 10617, Taiwan.
Researchers investigated the solid-state microstructure evolution of copper-indium (Cu/In) interfaces. They identified a stable CuIn2 phase and determined its growth rate, providing insights into Cu-In interfacial reactions.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Metallurgy
Background:
- Indium (In) is a promising low-temperature solder due to its low melting point and good mechanical properties.
- The solid-state microstructure evolution of In with various substrates is not well understood, primarily due to In's softness.
- Investigating Cu/In interfaces is crucial for understanding solder joint reliability and material interactions.
Purpose of the Study:
- To investigate the phase identification and microstructure evolution at the Cu/In interface after prolonged thermal aging.
- To determine the stability of phases formed in the Cu-In binary system.
- To elucidate the mechanism governing the growth rate of intermetallic compounds at the Cu/In interface.
Main Methods:
- Cryogenic broad Ar+ beam ion polishing was employed to prepare artifact-free Cu/In interfaces for microstructural analysis.
- Long-term thermal aging was performed on Cu/In samples.
- Phase identification and microstructure investigation techniques were utilized to analyze the aged interfaces.
Main Results:
- The intermetallic compound CuIn2 was identified as a stable phase forming at the Cu/In interface.
- The peritectoid temperature for the reaction Cu11In9 + In → CuIn2 was determined to be between 100 and 120 °C.
- The growth rate of CuIn2 was found to be influenced by the curvature of the Cu11In9/In phase and the temperature differential relative to the peritectoid temperature.
Conclusions:
- CuIn2 is a stable phase in the Cu-In binary system, forming at the Cu/In interface during thermal aging.
- The growth kinetics of CuIn2 are dependent on interfacial geometry and thermal conditions relative to the peritectoid temperature.
- A comprehensive mechanism for the solid-state interfacial reaction in Cu/In systems was proposed based on the experimental findings.
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