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Updated: Jul 15, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Published on: May 24, 2020

Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance

Jun-Hyeong Park¹, Won Park¹, Jeong-Hyeon Na¹

¹School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|September 28, 2023

Summary

This summary is machine-generated.

Atomically thin indium oxide semiconductors were developed using a solution process for high-performance thin-film transistors (TFTs). Optimized 3.12 nm indium oxide TFTs achieved high mobility and stability for next-generation electronics.

Keywords:

amorphous oxide semiconductor high performance solution process thin-film transistors ultrathin channel

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Area of Science:

Materials Science
Electronics Engineering
Nanotechnology

Background:

High-performance oxide transistors are crucial for modern electronic devices like displays and sensors.
Atomically thin semiconductors are key to advancing transistor technology.

Purpose of the Study:

To develop high-performance, atomically thin indium oxide (InO) semiconductors for thin-film transistors (TFTs) using a solution process.
To tune the properties of InO by controlling solution molarity for enhanced device characteristics.

Main Methods:

Fabrication of atomically thin InO semiconductors via a solution process.
Tuning of InO bandgap and thickness by controlling solution molarity.
Characterization of TFT performance, including field-effect mobility and on/off-current ratio.

Main Results:

Achieved high field-effect mobility (13.95 cm² V⁻¹ s⁻¹) and on/off-current ratio (1.42 × 10¹⁰) with 3.12 nm thick InO.
Demonstrated that charge transport is dominated by percolation conduction in optimized InO films.
Exhibited superior gate bias stress stability for both positive and negative biases.

Conclusions:

Solution-processed, atomically thin InO TFTs offer a viable route to high-performance electronic devices.
Optimized InO thickness and properties are critical for achieving superior transistor characteristics.
These findings pave the way for scalable, high-throughput fabrication of advanced transistors.