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Floquet Engineering of Black Phosphorus upon Below-Gap Pumping
Shaohua Zhou1, Changhua Bao1, Benshu Fan1
1State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China.
Physical Review Letters
|September 29, 2023
Summary
This study provides experimental evidence of light-induced band renormalization in black phosphorus using below-gap pumping. It reveals insights into Floquet engineering for quantum materials.
Area of Science:
- Condensed Matter Physics
- Quantum Materials Science
- Photonics
Background:
- Time-periodic light fields can modify electronic states in quantum materials, inducing novel properties.
- Floquet engineering, particularly with below-band-gap light, is promising but lacks direct experimental validation of momentum-resolved band renormalization.
Purpose of the Study:
- To provide direct experimental evidence of light-induced band renormalization in black phosphorus.
- To investigate the effects of below-band-gap pumping on electronic band structure.
- To differentiate between below-gap and near-resonance pumping effects.
Main Methods:
- Experimental investigation using black phosphorus as a quantum material.
- Application of time-periodic light fields with photon energy of 160 meV (below the band gap).
- Momentum-resolved band structure analysis to observe renormalization effects.
Main Results:
- Direct experimental evidence of light-induced band renormalization was observed in black phosphorus.
- The distinct effects of below-band-gap pumping versus near-resonance pumping were experimentally revealed.
- Demonstration of light-induced band engineering via below-band-gap excitation.
Conclusions:
- Below-band-gap pumping effectively induces band renormalization in quantum materials like black phosphorus.
- This work validates and extends the principles of Floquet engineering.
- Findings offer crucial insights for applying Floquet engineering to a broader range of quantum materials.

