Controllable Chemical Vapor Deposition Growth of High-Mobility Bi₂O₂Te Nanosheets

Air-stable bismuth oxychalcogenides (Bi₂O₂X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi₂O₂Se is commonly used, there have been few reported uses of Bi₂O₂Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi₂O₂Te nanosheets using the chemical vapor deposition method. Bi₂O₂Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi₂O₂Te single crystal exhibited a Hall mobility of 496 cm² V^-1 s^-1 at 300 K, which reached 5000 cm² V^-1 s^-1 at 2 K. The results expand the Bi₂O₂X family and show Bi₂O₂Te to be a promising candidate for use in highly efficient electronic devices.