Related Experiment Video
Updated: Jul 2, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
The NIST silicon lattice comparator upgrade
Marcus H Mendenhall1, James P Cline1, Csilla I Szabo1
1National Institute of Standards and Technology, U.S. Department of Commerce, 100 Bureau Dr., Gaithersburg, Maryland 20899, USA.
Abstract:
The NIST silicon lattice comparator has been in service, in various forms, since the 1970s. It is capable of measuring the difference in lattice spacing between specimens of high-quality float-zone silicon to Δd/d ≈ 6 × 10-9. It has recently undergone a thorough update of its control systems and mechanics. These upgrades result in the ability to collect data with improved stability, less settling time of the instrument, and less operator intervention.
Related Concept Videos
Trends in Lattice Energy: Ion Size and Charge
Lattice Centering and Coordination Number
Types of Unit Cells
Imagine taking a large number of identical...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Lattice Energies of Ionic Crystals
Imperfections in Crystal Structure: Stoichiometric Point Defects

