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Related Concept Videos

Trends in Lattice Energy: Ion Size and Charge02:54

Trends in Lattice Energy: Ion Size and Charge

An ionic compound is stable because of the electrostatic attraction between its positive and negative ions. The lattice energy of a compound is a measure of the strength of this attraction. The lattice energy (ΔHlattice) of an ionic compound is defined as the energy required to separate one mole of the solid into its component gaseous ions. For the ionic solid sodium chloride, the lattice energy is the enthalpy change of the process:
Lattice Centering and Coordination Number02:33

Lattice Centering and Coordination Number

The structure of a crystalline solid, whether a metal or not, is best described by considering its simplest repeating unit, which is referred to as its unit cell. The unit cell consists of lattice points that represent the locations of atoms or ions. The entire structure then consists of this unit cell repeating in three dimensions. The three different types of unit cells present in the cubic lattice are illustrated in Figure 1.
Types of Unit Cells
Imagine taking a large number of identical...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Lattice Energies of Ionic Crystals01:27

Lattice Energies of Ionic Crystals

Lattice energy represents the energy released when gaseous cations and anions combine to form an ionic solid, reflecting the strength of electrostatic interactions within the crystal. This process is fundamentally governed by Coulombic attraction between oppositely charged ions, where the potential energy varies inversely with the interionic distance and directly with the product of ionic charges. As ions approach one another, the electrostatic energy becomes increasingly negative, indicating a...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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The NIST silicon lattice comparator upgrade.

Marcus H Mendenhall1, James P Cline1, Csilla I Szabo1

  • 1National Institute of Standards and Technology, U.S. Department of Commerce, 100 Bureau Dr., Gaithersburg, Maryland 20899, USA.

The Review of Scientific Instruments
|October 3, 2023
PubMed
Summary

The NIST silicon lattice comparator was upgraded to enhance data collection precision. This updated instrument offers improved stability and reduced operator involvement for silicon lattice spacing measurements.

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Area of Science:

  • Materials Science
  • Metrology
  • Solid State Physics

Background:

  • The NIST silicon lattice comparator has been a key instrument since the 1970s.
  • It measures lattice spacing differences in silicon with high precision (Δd/d ≈ 6 × 10-9).

Purpose of the Study:

  • To detail recent upgrades to the NIST silicon lattice comparator's control systems and mechanics.
  • To report on the performance improvements resulting from these upgrades.

Main Methods:

  • The study involved a comprehensive update of the instrument's control systems.
  • Mechanical components of the comparator were also modernized.

Main Results:

  • The upgraded instrument demonstrates enhanced data collection stability.
  • Reduced settling time of the instrument was observed post-upgrade.
  • Less operator intervention is now required for data acquisition.

Conclusions:

  • The modernized NIST silicon lattice comparator offers superior performance for precise silicon lattice spacing measurements.
  • These upgrades enhance the reliability and efficiency of metrological தரவு collection.
  • The instrument remains a critical tool for high-precision materials analysis.