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High-throughput identification of spin-photon interfaces in silicon
Yihuang Xiong1, Céline Bourgois1,2, Natalya Sheremetyeva1
1Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA.
Science Advances
|October 4, 2023
Summary
Researchers computationally screened over 1000 silicon defects to find optimal spin-photon interfaces for quantum technology. Three promising candidates were identified as bright emitters in the telecom band, advancing quantum information science.
Area of Science:
- Quantum Information Science
- Materials Science
- Solid-State Physics
Background:
- Color centers in semiconductors are crucial for developing spin-photon interfaces for quantum applications.
- Identifying suitable silicon-based spin-photon interfaces is key for advancing quantum information technologies.
- The vast number of potential charged defects makes experimental identification challenging.
Purpose of the Study:
- To computationally screen over 1000 charged defects in silicon for promising spin-photon interfaces.
- To identify novel quantum defects in silicon suitable for quantum information applications.
- To discover bright emitters in the telecom band for quantum communication.
Main Methods:
- Utilized high-throughput first-principles computational screening.
- Employed a single-shot hybrid functional approach for accurate defect characterization.
- Analyzed over 1000 charged defects in silicon.
Main Results:
- Identified three promising spin-photon interfaces in silicon: [Formula: see text], [Formula: see text], and [Formula: see text].
- These defects function as potential bright emitters in the telecom band.
- Defect-bound excitons are key excitation mechanisms for these telecom band operations.
Conclusions:
- The identified defects represent significant advancements for silicon-based quantum information technologies.
- Computational screening is an effective strategy for discovering quantum defects in semiconductors.
- This work enables future large-scale computational searches for quantum defects.
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