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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: Jun 23, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Mustaqeem Shiffa1, Benjamin T Dewes1, Jonathan Bradford1

  • 1School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK.

Small (Weinheim an Der Bergstrasse, Germany)
|October 5, 2023
PubMed
Summary
This summary is machine-generated.

Researchers developed wafer-scale 2D gallium selenide (GaSe) using epitaxy, enabling scalable UV-C photon sensing for advanced optoelectronics. This bottom-up approach overcomes limitations of traditional 2D semiconductor fabrication methods.

Keywords:
gallium selenidemolecular beam epitaxyoptoelectronicsphotodetectors

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional semiconductors (2DSMs) offer transformative potential across various technological sectors.
  • Current top-down fabrication methods, like scotch-tape exfoliation, face challenges in scalability and precise functional engineering.
  • There is a need for scalable, bottom-up approaches to produce high-quality 2DSMs.

Purpose of the Study:

  • To demonstrate a bottom-up epitaxial technique for fabricating high-quality, wafer-scale 2D gallium selenide (GaSe).
  • To explore the potential of GaSe for optoelectronic applications, particularly in the UV-C spectrum.
  • To establish a scalable manufacturing route for advanced deep-UV optoelectronics.

Main Methods:

  • Epitaxial growth of GaSe layers with controlled thickness using a bespoke facility.
  • In situ studies for real-time monitoring and characterization during growth.
  • Theoretical and experimental verification of material properties, including centrosymmetry, stacking, and optical anisotropy.

Main Results:

  • Successful fabrication of wafer-scale, high-quality 2D GaSe.
  • Verification of centrosymmetry and van der Waals stacking of GaSe layers.
  • Demonstration of optical anisotropy and resonant UV absorption suitable for photon sensing.

Conclusions:

  • Epitaxy provides a scalable, bottom-up route for producing advanced 2D semiconductors like GaSe.
  • The demonstrated GaSe material is suitable for photon sensing in the UV-C range.
  • This work paves the way for scalable deep-UV optoelectronic devices.