A highly integrated nonvolatile bidirectional RFET with low leakage current

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail.