Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

441
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
441
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

788
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
788
Types of Semiconductors01:20

Types of Semiconductors

625
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
625
Semiconductors01:22

Semiconductors

721
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
721
MOSFET01:16

MOSFET

491
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
491

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Chain-Mobility-Enabled 1D Lanthanide Coordination Polymer Glassy Scintillators for Underwater X-Ray Videography.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Synergistic Interface Engineering via Buffer Layer and UVO Treatment for High-Performance PbS Quantum Dot Near-Infrared Photodiodes.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

miR-26a-5p inhibits the proliferation and myogenic differentiation of chicken BMSCs by targeting MDFIC.

Poultry science·2026
Same author

Highly cited original research in microneedle science from 2015 to 2025 a bibliometric and altmetric analysis.

Discover nano·2026
Same author

Dioscin alleviates allergic airway inflammation with IL-4R-associated modulation of epithelial-immune responses.

International immunopharmacology·2026
Same author

Red CPL from water insoluble achiral carbon dots assisted by cyclodextrin MOF templating.

Chemical communications (Cambridge, England)·2026
Same journal

Design Principles for Fluid Molecular Ferroelectrics.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Generating Unconventional Spin-Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

An In Situ H<sub>2</sub>S-Activated Plasmonic Nanozyme for Near-Infrared II Photo-Thermoelectric Catalytic Therapy.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

A Recyclable and Sustainable Hydroxypropyl Methylcellulose Electrolyte for Electrochromic Devices.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Perovskite Heterostructures for Optoelectronic Applications.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles

Related Experiment Video

Updated: Jul 14, 2025

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

8.9K

Nonvolatile Memory Organic Light-Emitting Transistors.

Meili Xu1, Changbin Zhao1, Zhimin Meng1

  • 1School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.

Advanced Materials (Deerfield Beach, Fla.)
|October 9, 2023
PubMed
Summary
This summary is machine-generated.

A novel ferroelectric organic light-emitting transistor (Fe-OLET) integrates memory and light emission. This device offers a path to higher integration density for advanced displays by eliminating storage capacitors.

Keywords:
ferroelectric polymersinterface optimizationnonvolatile memoriesorganic light-emitting transistors

More Related Videos

Blue-hazard-free Candlelight OLED
10:18

Blue-hazard-free Candlelight OLED

Published on: March 19, 2017

9.4K
Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.2K

Related Experiment Videos

Last Updated: Jul 14, 2025

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

8.9K
Blue-hazard-free Candlelight OLED
10:18

Blue-hazard-free Candlelight OLED

Published on: March 19, 2017

9.4K
Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.2K

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Display Technology

Background:

  • Active-matrix organic light-emitting display (AMOLED) technology faces integration density challenges due to Moore's Law limitations.
  • Scaling down device dimensions is becoming increasingly difficult for improving driver chip integration.

Purpose of the Study:

  • To develop a multifunctional and highly integrated device for advanced AMOLED applications.
  • To introduce a novel ferroelectric organic light-emitting transistor (Fe-OLET) that combines switching, light emission, and nonvolatile memory functions.

Main Methods:

  • Fabrication of a novel Fe-OLET device integrating ferroelectric polymer for nonvolatile memory.
  • Optimization of the device through interfacial modification techniques.
  • Demonstration of nonvolatile memory operations and light emission at zero gate bias.

Main Results:

  • The Fe-OLET successfully integrates switching, light-emitting, and nonvolatile memory capabilities.
  • The device exhibits remnant polarization enabling light emission without continuous power.
  • Interfacial modification resulted in a 20x improvement in field-effect mobility and a 5x increase in luminance.

Conclusions:

  • The Fe-OLET presents a promising internal-storage-driving paradigm for display technology.
  • This integrated device offers a pathway to storage capacitor-free circuitry, enhancing pixel aperture ratio and circuit integration density.
  • The Fe-OLET technology paves the way for on-chip advanced display applications.