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Published on: August 28, 2018
Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe2 monolayers
Le Lei1,2, Jiaqi Dai1,2, Haoyu Dong1,2
1Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China.
Researchers created a novel MoTe2 monolayer with a unique coloring-triangle lattice by introducing mirror-twin-boundaries. This structure exhibits an electronic Janus lattice with Dirac-like and flat bands, offering potential for advanced electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Transition metal dichalcogenides (TMDs) exhibit exotic electronic states.
- Crystal symmetries limit the diversity of TMD polymorphic structures.
- Tailoring TMD lattices and properties remains a significant challenge.
Purpose of the Study:
- To engineer a novel MoTe2 monolayer with a unique coloring-triangle (CT) lattice.
- To investigate the electronic properties and band structures of the CT-MoTe2 monolayer.
- To explore the potential applications of engineered domain boundaries in electronic devices.
Main Methods:
- Molecular beam epitaxy (MBE) for controlled synthesis of CT-MoTe2.
- Low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) for electronic characterization.
- Density-functional-theory (DFT) calculations for theoretical verification.
Main Results:
- Successfully constructed a CT-MoTe2 monolayer with uniform, ordered mirror-twin-boundaries.
- Identified an electronic Janus lattice with energy-dependent atomic and Te pseudo-sublattices.
- Observed Dirac-like and flat electronic bands via STM/STS and DFT calculations.
- Characterized two types of intrinsic domain boundaries, one preserving the Janus lattice.
Conclusions:
- The CT-MoTe2 monolayer presents a new platform for exploring exotic electronic states.
- The electronic Janus lattice and inherent band structures offer unique electronic properties.
- Engineered domain boundaries show promise as tunable electron-tunneling barriers for functional devices.
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