Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional Transistors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Electrical Engineering

Background:

• Two-dimensional material-based field-effect transistors (2DM-FETs) are critical for advanced electronic devices.
• Current modeling approaches struggle to integrate contact transport effects due to the inherent heterojunction nature of 2DM-FETs.
• Accurate modeling is essential for the development of electronic design automation (EDA) tools for 2DM-FETs.

Purpose of the Study:

• To generalize quasi-Fermi-level phase space theory (QFLPS) to incorporate contact transports in 2DM-FETs.
• To develop a model that accurately describes both Schottky and Ohmic contacts in 2DM-FETs.
• To overcome limitations of existing methods in balancing physical intelligibility and model compactness.

Main Methods:

• Generalization of quasi-Fermi-level phase space theory (QFLPS) by incorporating the Landauer formula.
• Development of the Landauer-QFLPS model for simulating 2DM-FETs.
• Experimental validation using a three-bit threshold inverter quantizer (TIQ) circuit fabricated with black phosphorus.

Main Results:

• The Landauer-QFLPS model effectively incorporates contact transports, overcoming previous modeling compromises.
• The proposed model demonstrates superior accuracy and efficiency compared to existing methods, particularly for non-monotonic drain conductance characteristics.
• Experimental results confirm the model's ability to accurately predict the performance of 2DM-FET-based circuits.

Conclusions:

• The developed Landauer-QFLPS model provides an accurate and efficient method for describing contact transports in 2DM-FETs.
• This model is highly valuable for advancing the electronic design automation (EDA) of 2DM-FET-based integrated circuits.
• The generalized theory offers a significant step towards the widespread adoption and design of next-generation electronic devices.