Controllable Spin-Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted
Jingyan Zhang1, Yunchi Zhao2, Pengwei Dou1
1School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China.
ACS Applied Materials & Interfaces
|October 10, 2023
Summary
Field-free spin-orbit torque (SOT) switching is achieved in magnetic multilayers via interfacial ion absorption. Interfacial engineering with titanium insertion tunes SOT efficiency for spintronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Spin-orbit torque (SOT) enables magnetization control for spintronics.
- Practical SOT devices face challenges from external magnetic fields and high current densities.
Purpose of the Study:
- To demonstrate field-free SOT-driven magnetization switching.
- To investigate the role of interfacial engineering in tuning SOT efficiency.
Main Methods:
- Fabrication of perpendicular Ta/CoFeB/MgO multilayers with interfacial Ti insertion.
- Polarized neutron reflection measurements.
- Interfacial characterization and first-principles calculations.
Main Results:
- Field-free SOT switching realized through interfacial ion absorption.
- Tunable SOT efficiency dependent on Ti insertion thickness.
- Canted magnetization observed with Ti insertion, enabling deterministic switching.
- Boron absorption by Ti enhances interfacial transparency and SOT efficiency.
Conclusions:
- Interfacial engineering via ion absorption offers a pathway for field-free SOT switching.
- Ti insertion and subsequent B absorption are key to enhanced SOT efficiency.
- This work enables purely electric control of spin configurations for advanced spintronics.
Keywords:
canted magnetizationdeterministic magnetization switchinginterfacial ion absorptionspin transparencyspin−orbit torqueMore Related Videos
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