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Large-Area Epitaxial Mott Insulating 1T-TaSe₂ Monolayer on GaP(111)B.

H Koussir¹, Y Chernukha¹, C Sthioul¹

¹Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France.

|October 11, 2023

Summary

Researchers fabricated two-dimensional Mott materials, specifically 1T-TaSe₂ monolayers, on gallium phosphide substrates. This breakthrough enables robust Mott insulating phases at high temperatures, advancing Mott electronic applications.

Keywords:

Mott semiconductors charge density wave moiré molecular beam epitaxy monolayer 1T-TaSe2

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Area of Science:

Materials Science
Condensed Matter Physics
Solid-State Chemistry

Background:

Two-dimensional (2D) Mott materials in the dichalcogenide family show promise for Mott electronic applications.
Current limitations include device integration challenges due to growth on metallic graphene substrates.

Purpose of the Study:

To report the fabrication of 1T-TaSe₂ monolayers on semiconducting gallium phosphide (GaP) substrates.
To investigate the nanoscale properties and electronic behavior of these 2D Mott materials.

Main Methods:

Molecular beam epitaxy (MBE) for monolayer growth.
Scanning tunneling microscopy (STM) and spectroscopy (STS) for nanoscale characterization.
Transport measurements across various scales (micrometric to millimetric).

Main Results:

Successful growth of 1T-TaSe₂ monolayers on GaP substrates.
Observation of charge density wave reconstruction and moiré patterns via STM.
Confirmation of a robust Mott insulating phase with a fully open gap, tunable by proximity effects, stable up to 400 K.

Conclusions:

1T-TaSe₂ monolayers on GaP overcome previous integration limitations.
The robust Mott insulating phase at high temperatures is suitable for advanced Mott electronic devices.