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Laser-Induced Periodic Surface Structures on Layered GaSe Crystals: Structural Coloring and Infrared Antireflection.

S O Gurbatov1,2, Yu M Borodaenko1, E V Mitsai1

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Femtosecond laser processing of Gallium Selenide (GaSe) crystals creates self-organized periodic surface structures. This nanostructuring enhances near-infrared transmittance and enables surface marking for optoelectronic applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Gallium Selenide (GaSe) is a van der Waals semiconductor with potential in nonlinear optics and optoelectronics.
  • The layered structure of GaSe presents challenges for conventional nanofabrication techniques.

Purpose of the Study:

  • To investigate structural and morphological transformations in GaSe crystals induced by multipulse femtosecond-laser exposure.
  • To explore laser-driven self-organization regimes for creating nanostructures on GaSe surfaces.
  • To assess the impact of these nanostructures on optical properties and potential applications.

Main Methods:

  • Multipulse femtosecond-laser exposure of Bridgman-grown ϵ-phase GaSe crystals.
  • Comprehensive structural characterization techniques to analyze surface transformations.
  • Optical measurements to evaluate changes in transmittance.

Main Results:

  • Formation of regular laser-induced periodic surface structures (LIPSSs) through interference of incident radiation and surface plasmon waves.
  • Transformation of the near-surface layer to amorphous Ga2Se3 with minimal oxidation.
  • A 1.2-fold increase in near-infrared transmittance observed on laser-patterned crystal facets.
  • Demonstration of multilevel structural color marking by controlling LIPSS periodicity.

Conclusions:

  • Direct femtosecond-laser patterning is a versatile, application-ready technology for precise nanostructuring of GaSe.
  • This method overcomes limitations imposed by the layered structure of van der Waals semiconductors.
  • The developed technique offers enhanced optical properties and novel surface functionalization capabilities for GaSe-based devices.