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Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study.
Abdelmoumene Laidouci1, Mamta2,3, V N Singh2,3
1Faculty of Sciences, University of Blida 1, 09000, Blida, Algeria.
Heliyon
|October 16, 2023
Summary
Zinc tin nitride (ZnSnN2) solar cells show high efficiency potential. Numerical simulations reveal optimal parameters for maximizing performance in these earth-abundant photovoltaic devices.
Area of Science:
- Materials Science: Exploration of novel semiconductor materials for energy applications.
- Solid State Physics: Investigation of semiconductor properties and device physics.
- Renewable Energy: Advancing photovoltaic technology for sustainable energy generation.
Background:
- Earth-abundant zinc tin nitride (ZnSnN2) is a promising semiconductor for photovoltaics and lighting.
- Its tunable narrow bandgap and high absorption coefficient make it attractive for solar cell applications.
- Existing solar technologies often rely on rare, toxic, and expensive elements.
Purpose of the Study:
- To numerically investigate the performance of zinc tin nitride (ZnSnN2) solar cell structures.
- To analyze the impact of various physical and geometrical parameters on solar cell efficiency.
- To determine optimal conditions for maximizing the power conversion efficiency of ZnSnN2-based solar cells.
Main Methods:
- Utilized SCAPS 1-D software for numerical simulations of ZnSnN2 solar cell structures.
- Investigated the influence of layer thicknesses (ZnO, CdS, ZnSnN2, Si BSF), temperature, and resistances (Rs, Rsh).
- Analyzed the effects of absorber layer defect density, interface defects, and generation-recombination profiles.
Main Results:
- An optimal absorber thickness of 1 μm yielded an efficiency of 23.9% under specific conditions.
- Under practical room temperature conditions, an 8 μm absorber layer and 0.3 μm BSF achieved 29.5% efficiency.
- High efficiency was correlated with high shunt resistance (10^6 Ω cm²), low series resistance (1 Ω cm²), and low defect density (10^10 cm⁻³).
Conclusions:
- Zinc tin nitride (ZnSnN2) demonstrates significant potential as a high-efficiency absorber material for thin-film solar cells.
- Optimization of layer thicknesses, operating parameters, and defect reduction is crucial for maximizing performance.
- ZnSnN2 offers a cost-effective, non-toxic, and abundant alternative to conventional photovoltaic materials.
