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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Related Experiment Video

Updated: Jul 12, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Multispectral silicon-based photodetector with stacked PN junctions.

Chenguang Wang, Jiangting Zhao, Huiliang Cao

|October 20, 2023

Summary

This summary is machine-generated.

This study introduces a novel multispectral silicon photodetector using stacked PN junctions. This design enhances imaging quality by reducing color aliasing and enabling broad spectral absorption with fast response times.

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Last Updated: Jul 12, 2025

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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Published on: April 1, 2020

Area of Science:

Optoelectronics
Materials Science
Semiconductor Devices

Background:

Multispectral imaging requires detectors capable of capturing information across various wavelengths.
Traditional photodetectors often face limitations in spectral range, response speed, or color fidelity.
Silicon-based photodetectors are desirable for their cost-effectiveness and compatibility with existing fabrication processes.

Purpose of the Study:

To propose and analyze a novel multispectral silicon-based photodetector structure.
To achieve high quantum efficiency and fast response times for improved imaging.
To reduce color aliasing and enable broad spectral absorption from ultraviolet to visible light.

Main Methods:

Design of a photodetector structure with four vertically stacked PN junctions.
Integration of four photodiodes within the substrate layer.
Analysis of quantum efficiency and response time characteristics.

Main Results:

Achieved a quantum efficiency of up to 70%.
Demonstrated a response time of 5.1 × 10^-8 s.
The vertically stacked PN junction structure effectively reduces color aliasing.

Conclusions:

The proposed photodetector offers a simple structure for multispectral imaging.
Achieves high-speed, multispectral absorption from ultraviolet to visible light.
Provides an effective solution for high-quality imaging applications.