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Anisotropic magnetoresistance: materials, models and applications.
Philipp Ritzinger1,2, Karel Výborný1
1FZU-Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, Praha 6 16253, Czech Republic.
Anisotropic magnetoresistance (AMR) causes resistance in ferromagnets to vary with magnetization direction. This century-old phenomenon is reviewed in both ferromagnets and antiferromagnets, with applications in modern sensors.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid State Physics
Background:
- The resistance of conductive ferromagnets exhibits anisotropy relative to magnetization direction.
- This phenomenon, known as anisotropic magnetoresistance (AMR), shows differences in resistance when magnetization is parallel versus perpendicular to electric current.
- AMR has been observed and studied in both ferromagnets and, more recently, antiferromagnets.
Purpose of the Study:
- To provide a comprehensive review of the anisotropic magnetoresistance (AMR) effect.
- To examine the materials and physical mechanisms underlying AMR.
- To discuss the recent identification and study of AMR in antiferromagnets.
Main Methods:
- Literature review of the anisotropic magnetoresistance (AMR) phenomenon.
- Analysis of material properties and physical mechanisms contributing to AMR.
- Examination of studies on AMR in both ferromagnets and antiferromagnets.
Main Results:
- The resistance in certain ferromagnets is dependent on the relative orientation of magnetization and electric current.
- This anisotropic magnetoresistance (AMR) effect has been investigated for over a century.
- Recent research has extended the study of AMR to antiferromagnetic materials.
Conclusions:
- Anisotropic magnetoresistance (AMR) is a well-established phenomenon in ferromagnets with diverse applications.
- The understanding of AMR has expanded to include antiferromagnetic materials.
- AMR-based sensors are integral to various technologies, including automotive, aerospace, and biomedical imaging.
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