Si/Ge interfacial thermal conductance enhancement through Sn nanoparticle embedding

Ying-Guang Liu1, Heng-Xuan Li1, Yu-Jun Qiu1

  • 1Hebei Key Laboratory of Low Carbon and High Efficiency Power Generation Technology, North China Electric Power University, Baoding 071003, Hebei, China. yingguang266@126.com.

Summary

Embedding tin nanoparticles at the silicon/germanium interface significantly enhances interfacial thermal conductance (ITC). Optimal nanoparticle size and number boost ITC by 1.95 times through improved inelastic phonon scattering.

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