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Two-dimensional HfS2-ZrS2 lateral heterojunction FETs with high rectification and photocurrent
Lin Li1,2, Peize Yuan1, Zinan Ma1
1School of Physics, Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, Henan Normal University, Xinxiang, Henan 453007, China. lxpslxhhw@126.com.
Nanoscale
|October 25, 2023
Summary
This study introduces a new field effect transistor (FET) using a HfS2-ZrS2 lateral heterojunction. This device integrates rectifying and photodetection functions, paving the way for miniaturized optoelectronic nanodevices.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- Miniaturized, multifunctional devices are crucial for integrated circuits.
- Bulk materials face limitations in creating compact, all-in-one systems.
Purpose of the Study:
- To design a field effect transistor (FET) capable of simultaneous rectifying and photodetection.
- To explore the potential of monolayer lateral heterojunctions for integrated optoelectronic functions.
Main Methods:
- Fabrication of a field effect transistor (FET) utilizing a monolayer HfS2-ZrS2 lateral heterojunction.
- Characterization of the device's electrical and photoresponse properties in the visible light spectrum.
Main Results:
- The HfS2-ZrS2 lateral heterojunction FET exhibited simultaneous rectifying behavior and photodetection.
- Achieved a high rectification ratio of ~10^12, photocurrent density of 13.3 nA m^-1, responsivity of 57 mA W^-1, and extinction ratio of 108.
- Observed a higher rectification ratio in the single-gate FET compared to the dual-gate FET under negative gate voltage.
Conclusions:
- Monolayer lateral heterojunction-based FETs offer a viable pathway for integrating multiple functions into single nanodevices.
- This approach advances the development of compact and efficient optoelectronic systems.
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