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All-BN distributed Bragg reflectors fabricated in a single MOCVD process
Arkadiusz Ciesielski1, Jakub Iwański1, Piotr Wróbel1
1University of Warsaw, Faculty of Physics, Pasteura 5, 02-093 Warsaw, Poland.
Nanotechnology
|October 25, 2023
Summary
We fabricated all-boron nitride (BN) Distributed Bragg Reflectors (DBR) using a single MOCVD process. These BN DBRs offer high reflectance and tunable wavelengths without etching, enabling novel photonic devices.
Area of Science:
- Photonics
- Materials Science
- Nanotechnology
Background:
- Distributed Bragg Reflectors (DBR) are crucial photonic components.
- Existing DBR fabrication often involves complex material combinations or post-processing etching, limiting integration.
- There is a need for simpler, integrable DBR structures.
Purpose of the Study:
- To demonstrate a novel fabrication method for DBR structures using only undoped boron nitride (BN) layers.
- To achieve high refractive index contrast in BN layers through controlled porosity.
- To enable single-step fabrication of DBRs without post-process etching.
Main Methods:
- Utilized metal-organic chemical vapor deposition (MOCVD) for fabricating BN layers.
- Controlled layer porosity by adjusting growth temperatures during MOCVD.
- Fabricated DBR structures with 15.5 pairs of BN layers.
Main Results:
- Achieved DBR structures solely from undoped BN layers with high refractive index contrast.
- Demonstrated a maximum reflectance of 87 ± 1% without etching.
- Showcased tunable maximum reflectance wavelengths from 500 nm to the infrared (IR) region.
- Successfully created an optical microcavity using the fabricated BN DBRs.
Conclusions:
- Developed a single-process fabrication technique for BN DBRs.
- These BN DBRs offer high performance and tunability, suitable for advanced photonic applications.
- The all-BN DBRs are promising for integration with single-photon emitters in hexagonal boron nitride (h-BN) for cavity-based quantum sources.

