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Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths
Yulia Kirichenko Bobretsova1, Dmitriy Veselov1, Alexander Klimov1
1Ioffe Institute, 194021 Saint-Petersburg, Russia.
Nanomaterials (Basel, Switzerland)
|October 27, 2023
Summary
Researchers fabricated semiconductor lasers using an AlGaInAs/InP heterostructure. Wider stripe widths increased optical power but decreased lateral brightness, impacting laser performance.
Area of Science:
- Optoelectronics
- Semiconductor device physics
- Materials science
Background:
- Semiconductor lasers are crucial for various applications.
- Optimizing laser performance requires understanding device geometry effects.
- AlGaInAs/InP heterostructures offer unique optoelectronic properties.
Purpose of the Study:
- To investigate the impact of stripe width on semiconductor laser characteristics.
- To analyze the trade-offs between optical power and lateral brightness.
- To optimize laser design for specific applications.
Main Methods:
- Fabrication of semiconductor lasers with varying stripe widths (20-150 μm).
- Utilizing an AlGaInAs/InP heterostructure with an ultra-narrow waveguide.
- Characterization of light-current (L-I), current-voltage (I-V), spectral, and spatial properties.
Main Results:
- Operating optical power increased from 1.4 W to 4.3 W with wider stripe widths.
- Lateral brightness decreased from 1.09 W/(mm*mrad) to 0.65 W/(mm*mrad) as stripe width increased.
- A clear dependence of laser characteristics on stripe width was demonstrated.
Conclusions:
- Stripe width is a critical parameter influencing semiconductor laser performance.
- Wider stripes enhance optical power output.
- Narrower stripes are preferable for applications requiring high lateral brightness.
