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Photoluminescence of Cesium-Doped Sodium Iodide Films Irradiated by UV LED
Hsing-Yu Wu1,2,3, Yu-Hung Kuan4, Guoyu Yu5
1System Manufacturing Center, National Chung-Shan Institute of Science and Technology, New Taipei City 237209, Taiwan.
Abstract:
Alkali metal halides have long been used as scintillators for applications as sensors and detectors. Usually, a small amount of impurities are added to these inorganic materials to improve their luminescence efficiencies. We investigate the structures and luminescent properties of un-doped sodium iodide (NaI) and cesium-doped NaI (NaI:Cs) films deposited by thermal vacuum evaporation. Instead of using the toxic element thallium (Tl), we introduced cesium dopant into NaI. This is the first study for the NaI:Cs film excited by UV LED's ultraviolet C (273 nm, 4.54 eV). The luminescence spectra show two main peaks at 3.05 and 4.32/3.955 eV (for fused silica/B270 substrate), originating from the intrinsic defects and/or activator excited states and the intrinsic self-trapped excitons (STEs), respectively. In general, both Cs-doping and post-annealing processes enhance the luminescence performance of NaI films.
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