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SEU Hardened D Flip-Flop Design with Low Area Overhead
Chenyu Yin1, Yulun Zhou1, Hongxia Liu1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Abstract:
D flip-flop (DFF) is the basic unit of sequential logic in digital circuits. However, because of an internal cross-coupled inverter pair, it can easily appear as a single event upset (SEU) when hit by high-energy particles, resulting in the error in the value stored in the flip-flop. On this basis, a new structure D flip-flop is proposed in this paper. This flip-flop uses an asymmetric scheme in which the master-slave latch adopts different hardening structures. By sacrificing circuit speed in exchange for stronger SEU fortification capability, the SEU threshold of this structure is improved by 10 times compared to traditional D flip-flops. It has also been compared with Dual Interlocked Storage Elements (DICEs), and it saves the area cost of six transistors compared to the DICE structure. Under the same operating conditions, the average power consumption and peak power consumption are, respectively, 9.8% and 18.8% lower than those of the DICE circuit, making it suitable for soft radiation environments where high circuit speed is not a critical requirement.
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