Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

Area of Science:

• Semiconductor device physics
• Radiation effects in electronics
• Materials science of Gallium Nitride (GaN)

Background:

• Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are critical components in modern electronics.
• Understanding their susceptibility to single-event effects (SEEs) is crucial for reliability in radiation environments.
• Single-event transients (SETs) can disrupt device operation.

Purpose of the Study:

• To investigate the impact of various parameters on the single-event transient effect in GaN HEMTs.
• To identify the most sensitive operating conditions and device regions for SETs.
• To provide insights for designing radiation-hardened GaN devices.

Main Methods:

• Two-dimensional simulation of GaN HEMT structure using Silvaco TCAD.
• Incorporation of essential models, including carrier mobility.
• Systematic variation of device state, incidence position, drain voltage, linear energy transfer (LET) values, and incidence angle.

Main Results:

• The single-event transient effect is more pronounced in the off-state compared to the on-state.
• The region near the drain exhibits the highest sensitivity to single-event effects.
• Peak transient current escalates with increasing drain bias and incident ion LET.
• Drain charge collection time is prolonged with a greater angle of incidence for heavy ions.

Conclusions:

• GaN HEMTs exhibit state-dependent sensitivity to single-event transients, with the off-state being more vulnerable.
• Device location and operational parameters like drain voltage and LET significantly influence SET severity.
• Incident ion angle affects charge collection dynamics, impacting transient behavior.