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High Isolation, Double-Clamped, Magnetoelectric Microelectromechanical Resonator Magnetometer
Thomas Mion1, Michael J D'Agati2, Sydney Sofronici2
1US Naval Research Laboratory, American Society for Engineering Education Postdoc, Washington, DC 02375, USA.
Sensors (Basel, Switzerland)
|October 28, 2023
Summary
New magnetoelectric (ME) sensors offer ultra-low power and high sensitivity for magnetic field detection. Optimized resonant beam designs improve vibration resistance and performance for continuous monitoring applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Physics
Background:
- Magnetoelectric (ME)-based magnetometers are gaining attention for their ultra-low power consumption, small size, and picotesla-level detection limits.
- These sensors are ideal for continuous monitoring of near DC and low-frequency AC magnetic fields due to their sensitive electric readout.
- Existing ME magnetic sensors often rely on the resonant characteristics of microelectromechanical systems (MEMS) in heterostructure devices.
Purpose of the Study:
- To design and fabricate an optimized fixed-fixed resonant beam structure for ME magnetic sensors.
- To improve vibration susceptibility and power efficiency compared to previous ME-MEMS cantilever designs.
- To explore the use of novel magnetostrictive thin films for enhanced sensor performance.
Main Methods:
- Fabrication of a fixed-fixed resonant beam structure using piezoelectric aluminum nitride (AlN) and a novel (Fe0.5Co0.5)0.92Hf0.08 magnetostrictive alloy.
- Optimization of the resonant device configuration for high isolation and low power operation (~800 nW).
- Characterization of magnetic field sensitivity and detection limits using electric field drive and readout.
Main Results:
- The new double-clamped ME MEMS resonator design demonstrates high isolation and reduced susceptibility to vibration.
- The use of the (Fe0.5Co0.5)0.92Hf0.08 alloy provides a low-stress, amorphous, high magnetostrictive material with ultra-low magnetocrystalline anisotropy.
- The optimized sensor design achieves a magnetic field sensitivity of 125 Hz/mT when released in a compressive state.
Conclusions:
- The developed fixed-fixed resonant beam ME MEMS sensor offers improved performance and vibration resistance.
- The novel magnetostrictive alloy and optimized design pave the way for next-generation, highly sensitive magnetic field sensors.
- Further design parameters for future ME MEMS field sensors are discussed based on the experimental results.
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