Related Experiment Video
Updated: Jul 12, 2025

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
Cd2FeReO6: A High-TC Double Perovskite Oxide with Remarkable Tunneling Magnetoresistance
Xun Kang1,2, Ryuta Ishikawa3, Alexei A Belik1
1Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Abstract:
In this study, we successfully synthesized the double perovskite oxide Cd2FeReO6 by using a high-temperature and high-pressure method. The crystal structure was confirmed to belong to the P21/n space group, exhibiting approximately 68% ordering of Fe3+ and Re5+ ions at the perovskite B-site with the remaining regions showing antisite disorder. The measured Curie temperature of Cd2FeReO6 was 460 K, slightly lower than expected but still significantly above room temperature. Remarkably, Cd2FeReO6 displayed a remarkable low-field butterfly type tunneling magnetoresistance of -23% (-37% between the lowest and the largest values) at 5 K and 90 kOe, the highest among the A2FeReO6 (A = Ca, Sr, Pb, Ba) family. First-principles calculations provided insight into the origin of this observed magnetoresistance behavior, revealing Cd2FeReO6's half-metallic ferrimagnetic nature. This research extends our understanding of the double perovskite family and emphasizes its potential significance in the domains of spintronics and materials science. The exploration of differing magnetoresistance behaviors between Cd2FeReO6 and Ca2FeReO6, along with the influence of antisite disorder in Cd2FeReO6, opens intriguing avenues for further research.
Related Concept Videos
Ferromagnetism
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

