AgIn₅S₈/ZnS Quantum Dots for Luminescent Down-Shifting and Antireflective Layer in Enhancing Photovoltaic Performance

Colloidal AgIn₅S₈/ZnS quantum dots (QDs) have recently emerged as a promising, efficient, nontoxic, down-shifting material in optoelectronic devices. These QDs exhibit a high photoluminescent quantum yield and offer a range of potential applications, specifically in the field of photovoltaics (PVs) for light management. In this work, we report an eco-friendly method to synthesize AgIn₅S₈/ZnS QDs and deposit them on commercial silicon solar cells (with an active area of 7.5 cm²), with which the short-circuit current (J_SC) enhanced by 1.44% and hence the power conversion efficiency by 2.51%. The enhancements in PV performance are mainly attributable to the improved external quantum efficiency in the ultraviolet region and reduced surface reflectance in the ultraviolet and near-infrared regions. We study the effect of QD concentration on the bifunctions of downshifting and antireflection. The optimal 15 mg/mL QDs blade-coated onto the Si solar cells realize maximum current generation as the reflectance loss in the visible wavelength is compensated by the minimized reflection in the near-infrared region.